DEXS-1156S Datasheet, PDF (1/7 Pages) Sanken electric – Ultra Fast Recovery Diode

V_RM = 600 V, I_F(AV) = 15 A, t_rr = 19 ns
Ultra Fast Recovery Diode
DEXS-1156S
Features
The DEXS-1156S is a fast recovery diode of
600 V / 15 A. The typical t_rr of 19 ns (I_F : I_RP = 1 : 2) is
realized optimizing a life-time control. The low thermal
resistance package achieves high performance in terms
of heat dissipation.
● V_RM------------------------------------------------------ 600 V
● I_F(AV)------------------------------------------------------- 15 A
● V_F (100 °C) --------------------------------------1.2 V (typ.)
● t_rr (I_F : I_RP = 1 : 2)-------------------------------- 19 ns (typ.)
Applications
● PFC circuit (CCM)
● Freewheel Diode
(Offline Buck and Buck-boost Converter)
Package
TO220-2L
12
1
2
Not to scale
Absolute Maximum Ratings
 Unless otherwise specified, T_A is 25 °C
Parameter
Peak Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
I²t Limiting Value
Junction Temperature
Storage Temperature
Symbol
V_RM
I_F(AV)
I_FSM
I²t
T_j
T_stg
Rating
600
15
100
50
−40 to 150
−40 to 150
Unit
Notes
V
A
A
10 ms
Half sinewave, one shot
A²s 1 ms ≤ t ≤10 ms
°C
°C
Electrical Characteristics
 Unless otherwise specified, T_A is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
T_A = 25 °C, I_F = 15 A
V_F
T_A = 100 °C, I_F = 15 A
−
1.3
1.6
V
−
1.2
−
V
Reverse Leakage Current
I_R
V_R = V_RM
−
−
75
µA
Reverse Leakage Current
Under High Temperature
Hï½¥I_R
V_R = V_RM, T_j = 150 °C
−
−
20
mA
Reverse Recovery Time
t_rr1
I_F = I_RP = 500 mA,
T_j = 25 °C, 90 % recovery point
−
24
30
ns
t_rr2
I_F = 500mA, I_RP = 1000 mA,
T_j = 25 °C, 75 % recovery point
−
19
25
ns
Thermal Resistance*
R_th(j-L)
−
−
3.0 °C/W
* R_th(j-L) is thermal resistance between junction and Lead. Lead temperature (T_L) is measured at the under of the
screw hole of buck side.
DEXS-1156S-DSE Rev.1.0
SANKEN ELECTRIC CO.,LTD.
1
Jun. 16, 2015
http://www.sanken-ele.co.jp/en/