2SK3801 Datasheet, PDF (1/1 Pages) Sanken electric – MOSFET

MOS FET 2SK3801
Absolute Maximum Ratings _(Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*¹
±140
A
PD
EAS*¹
100 (Tc=25ºC)
W
400
mJ
Tch
150
ºC
Tstg
–40 to +150
ºC
* 1: PW 100µs, duty cycle 1%
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50Ω
Electrical Characteristics
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
trr
Rth (ch-c)
Rth (ch-a)
ID =100µA, VGS =0V
VGS = ±15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22Ω
RL = 0.57Ω, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/µs
(Ta=25ºC)
Ratings
min typ max ^Unit
40
V
±10 µA
100 µA
2.0 3.0 4.0 V
30 50
S
5.0 6.0 mΩ
5100
pF
1200
pF
860
pF
100
ns
100
ns
300
ns
130
ns
0.9 1.5 V
100
ns
1.25 °C/W
35.71 °C/W
External Dimensions TO-3P
15.6^±0.4
13.6
9.6
4.8^±0.2
2.0^±0.1
a
3.2^±0.1
b
2
3
+0.2
1.05 ^{– 0.1}
5.45^±0.1
5.45^±0.1
15.8^±0.2
(1) (2) (3)
1. Gate
2. Drain
3. Source
+0.2
0.65^–0.1
1.4
a) Part No.
b) Lot No.
(Unit: mm)
■ ID — VDS Characteristics (typ.)
70
■ ID — VGS Characteristics (typ.)
70
(VDS = 10V)
■ VDS — VGS Characteristics (typ.)
(Ta = 25ºC)
1.0
■ Re (yfs) — ID Characteristics (typ.)
1000
(VDS = 10V)
60
60
50
50
10V
40
5.5V
5.0V
40
30
30
VGS = 4.5V
Ta = 150°C
20
20
25°C
10
10
–55°C
0.8
Tc = –55°C
25°C
0.6
100
150°C
0.4
ID = 70A
10
0.2
35A
0
0
0
1
0
0.5
1.0
1.5
2.0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
0
5
10
15
20
1
VDS (V)
VGS (V)
VGS (V)
10
70
ID (A)
■ RDS (ON) — ID Characteristics (typ.)
Ta = 25ºC
VGS = 10V
7.0
■ RDS (ON) — TC Characteristics (typ.)
ID = 35A
10.0
VGS = 10V
■ j-c — Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
10
30
(ID = 35A) ₁₅
6.0
5.0
4.0
3.0
2.0
1.0
0
0 10 20 30 40 50 60 70
ID (A)
8.0
1
6.0
4.0
0.1
2.0
0
–60 –50 0
0.01
50
100 150
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Tc (ºC)
Pw (s)
VDS
20
10
10
VGS
VDD = 8V
12V
14V
16V
5
24V
0
0
0
50
100
150
Qg (nC)
112
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.)
50000
(Ta = 25ºC)
70
VGS = 0V
f = 1MHz
60
10000
50
Ciss
40
30 ^{Ta = 150°C}
1000
Coss
25°C
20
–55°C
Crss
10
■ Safe Operating Area (single pulse)
500
100
10
R^{DS (ON) LIMITED}
(Ta = 25ºC)
P
P
T _=10µs
P
T
P
T
=10
=^T_1=m1s00^µs
ms
■ PD — TC Characteristics
120
100
80
60
40
1
20
100
0
10 20 30 40 50
VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
0.1
0.1
1
10
VDS (V)
0
100
0 20 40 60 80 100 120 140 160
Tc (ºC)