2SK3800 Datasheet, PDF (1/1 Pages) Sanken electric – MOSFET

MOS FET 2SK3800
Absolute Maximum Ratings _(Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*¹
±140
A
PD
EAS*²
80 (Tc=25ºC)
W
400
mJ
Tch
150
ºC
Tstg
–40 to +150
ºC
* 1: PW 100µs, duty cycle 1%
* 2: VDD =20V, L =1mH, IL =20A, unclamped,
RG = 50Ω
Electrical Characteristics
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
trr
Rth (ch-c)
Rth (ch-a)
ID = 100µA, VGS = 0V
VGS = ±15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22Ω
RL = 0.57Ω, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/µs
(Ta=25ºC)
Ratings
min typ max ^Unit
40
V
±10 µA
100 µA
2.0 3.0 4.0 V
30 50
S
5.0 6.0 mΩ
5100
pF
1200
pF
860
pF
100
ns
100
ns
300
ns
130
ns
0.9 1.2 V
110
ns
1.56 ºC/W
62.5 ºC/W
External Dimensions TO220S
4.44^±0.2
(5)
1.3^±0.2
1.2^±0.2
0.86^{+–00..21}
2.54^±0.1
2.6^±0.2
0.1^{+–00..21}
2.54^±0.1
0.4^±0.1
10.2^±0.3
(5.4)
123
Details of the back (S=2/1)
(Unit: mm)
■ ID — VDS Characteristics (typ.)
70
■ ID — VGS Characteristics (typ.)
70
(VDS = 10V)
■ VDS — VGS Characteristics (typ.)
(Ta = 25ºC)
1.0
■ Re (yfs) — ID Characteristics (typ.)
500
(VDS = 10V)
60
60
50
50
10V
40
5.5V
5.0V
40
30
30
VGS = 4.5V
Ta = 150°C
20
20
25°C
10
10
–55°C
Tc = –55°C
0.8
100
25°C
150°C
0.6
0.4
ID = 70A
10
0.2
35A
0
0
0
1
0
0.5
1.0
1.5
2.0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
0
5
10
15
20
1
VDS (V)
VGS (V)
VGS (V)
10
70
ID (A)
■ RDS (ON) — ID Characteristics (typ.)
Ta = 25ºC
VGS = 10V
7.0
■ RDS (ON) — TC Characteristics (typ.)
ID = 35A
VGS = 10V
12.0
■ j-c — t Characteristics (Single pulse)
10
■ Dynamic I/O Characteristics (typ.)
30
(ID = 35A) ₁₅
6.0
10.0
5.0
8.0
1
4.0
6.0
3.0
4.0
0.1
2.0
1.0
2.0
VDS
20
10
10
VGS
VDD = 8V
12V
14V
16V
5
24V
0
0
0.01
0
0 10 20 30 40 50 60 70
–60 –50 0
50
100 150
0.00001 0.0001 0.001 0.01 0.1 1 10 100
0
ID (A)
Tc (ºC)
t (s)
0
50
100
150
Qg (nC)
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.)
50000
(Ta = 25ºC)
70
VGS = 0V
f = 1MHz
60
10000
50
Ciss
40
1000
Coss
Crss
30 ^{Ta = 150°C}
25°C
20
–55°C
10
100
0
10 20 30 40 50
VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
■ Safe Operating Area (single pulse)
500
100
10
R^{DS (ON) LIMITED}
(Ta = 25ºC)
P
P
T _=10µs
P
T
P
T
=10
=^T_1=m1s00^µs
ms
1
0.1
0.1
1
10
100
VDS (V)
■ PD — TC Characteristics
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Tc (ºC)
111