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2SK3711_07 Datasheet, PDF (1/9 Pages) Sanken electric – Low on-resistance
60V N -ch MOSFET
2SK3711
December 2005
■Features
• Low on-resistance
• Built-in gate protection diode
• Avalanche energy capability guaranteed
■Applications
• Electric power steering
• High current switching
■Equivalent circuit
D (2)
■Package—TO3P
G (1)
S (3)
Absolute maximum ratings
Characteristic
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Symbol
VDSS
VGSS
ID
ID (pulse) *1
PD
EAS *2
(Ta=25°C)
Rating
Unit
60
V
±20
V
±70A
A
±140A
A
130 (Tc=25°C)
W
468
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μs, duty cycle≤1%
*2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
1/9
T02-002EA-051124