2SK1181 Datasheet, PDF (1/1 Pages) Sanken electric – MOSFET

2SK1181
External dimensions 2 ...... FM100
Absolute Maximum Ratings
Symbol
Ratings
VDSS
500
VGSS
±20
ID
±13
ID (pulse)
±52 (Tch 150ºC)
PD
85 (Tc = 25ºC)
EAS _*
660
Tch
150
Tstg
–55 to +150
*: VDD = 50V, L = 7mH, IL = 13A, unclamped,
See Figure 1 on Page 5.
(Ta = 25ºC)
Unit
V
V
A
A
W
mJ
ºC
ºC
Electrical Characteristics
Symbol
Ratings
min
typ
V(BR) DSS
500
I GSS
I DSS
VTH
2.0
Re (yfs)
8.5
13
RDS (on)
0.35
Ciss
2700
Coss
350
ton
65
toff
180
max
±500
250
4.0
0.4
(Ta = 25ºC)
Unit
Conditions
V
ID = 250µA, VGS = 0V
nA
VGS = ±20V
µA
VDS = 500V, VGS = 0V
V
VDS = 10V, ID = 250µA
S
VDS = 10V, ID = 6.5A
Ω
VGS = 10V, ID = 6.5A
pF
VDS = 25V, f = 1.0MHz,
pF
VGS = 0V
ns
ID = 6.5A, VDD = 250V,
VGS = 10V,
ns
See Figure 2 on Page 5.
VDS — ID Characteristics
12 _10V
10
8
6
5V
4
2
4.5V
VGS = 4 V
0
0
5
10
15
20
VDS (V)
VGS — ID Characteristics
14
VDS = 10V
12
10
8
6
4
TC = – 55ºC
2
25ºC
125ºC
0
0
2
4
6
8 10
VGS (V)
ID — RDS (ON) Characteristics
0.5
0.4
VGS =10V
0.3
0.2
0.1
0
0
2
4
6
8
10
12
ID (A)
ID — Re (yfs)
20
10 ^{TC = – 55ºC}
25ºC
5
125ºC
Characteristics
VDS = 10V
1
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10 20
VGS — VDS Characteristics
10
8
6
ID =13A
4
ID = 8.5A
2
0
2
5
10
20
VGS (V)
TC — RDS (ON)
1.0
0.8
Characteristics
ID =6.5A
VGS =10V
0.6
0.4
0.2
0
–50
0
50
100
150
Tc (ºC)
VDS — Capacitance Characteristics
10000
5000
VGS = 0V
f = 1MHz
Ciss
1000
500
Coss
100
50
0
Crss
10 20 30 40 50
VDS (V)
VSD — IDR Characteristics
14
12
10
8
6
VGS = 0V
4 ^5V,10V
2
0
0
0.5
1.0
1.5
VSD (V)
Safe Operating Area
(Tc = 25ºC)
100
50
10
5
ID (pulse) max
ID max _LIMITED
(ON)
DC
R^DS
1ms
OPERATION
(1s¹_ho⁰_t⁰₎ ^µs
1
0.5
0.1
1
5 10
50 100
VDS (V)
500 1000
Ta — PD Characteristics
90
80
70
60
50
40
30
20
10 _{Without heatsink}
0
0
50
100
150
Ta (ºC)
12