2SK1180 Datasheet, PDF (1/1 Pages) Sanken electric – MOSFET

2SK1180
External dimensions 2 ...... FM100
Absolute Maximum Ratings
Symbol
Ratings
VDSS
500
VGSS
±20
ID
±10
ID (pulse)
±40 (Tch 150ºC)
PD
85 (Tc = 25ºC)
EAS _*
500
Tch
150
Tstg
–55 to +150
*: VDD = 50V, L = 9mH, IL = 10A, unclamped,
See Figure 1 on Page 5.
(Ta = 25ºC)
Unit
V
V
A
A
W
mJ
ºC
ºC
Electrical Characteristics
Symbol
Ratings
min
typ
V(BR) DSS
500
I GSS
I DSS
VTH
2.0
Re (yfs)
6.1
9.2
RDS (on)
0.5
Ciss
1800
Coss
250
ton
60
toff
140
max
±500
250
4.0
0.6
(Ta = 25ºC)
Unit
Conditions
V
ID = 250µA, VGS = 0V
nA
VGS = ±20V
µA
VDS = 500V, VGS = 0V
V
VDS = 10V, ID = 250µA
S
VDS = 10V, ID = 5.0A
Ω
VGS = 10V, ID = 5.0A
pF
VDS = 25V, f = 1.0MHz,
pF
VGS = 0V
ns
ID = 5A, VDD = 250V,
VGS = 10V,
ns
See Figure 2 on Page 5.
VDS — ID Characteristics
10
10V
8
5V
6
4
4.5V
2
VGS = 4V
0
0
5
10
15
20
VDS (V)
VGS — ID Characteristics
10
VDS = 10V
8
6
4
2
TC = – 55ºC
25ºC
125ºC
0
0
2
4
6
8 10
VGS (V)
ID — RDS (ON) Characteristics
1.0
0.8
VGS =10V
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10
ID (A)
ID — Re (yfs) Characteristics
20
VDS = 10V
10
TC = – 55ºC
25ºC
125ºC
5
1
0.5
0.3
0.05 0.1
0.5 1
ID (A)
5 10
VGS — VDS Characteristics
10
8
6
ID =10A
4
ID = 5A
2
0
2
5
10
20
VGS (V)
TC — RDS (ON)
1.4
1.2
Characteristics
ID = 5A
VGS =10V
1.0
0.8
0.6
0.4
0.2
0
–50
0
50
100
150
Tc (ºC)
VDS — Capacitance Characteristics
5000
Ciss
VGS = 0V
f = 1MHz
1000
500
Coss
100
50
30
0
Crss
10 20 30 40 50
VDS (V)
VSD — IDR Characteristics
10
8
6
4
VGS = 0V
5V,10V
2
0
0
0.5
1.0
1.5
VSD (V)
Safe Operating Area
(Tc = 25ºC)
70
ID (pulse) max
R^{DS (ON}L^{) IMITED}
10
ID max
1ms
100_µs
(1shot)
5
1
DC _OPERATION
0.5
0.1
5 10
50 100
VDS (V)
500 1000
Ta — PD Characteristics
90
80
70
60
50
40
30
20
10 _{Without heatsink}
0
0
50
100
150
Ta (ºC)
11