|
2SD2589 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose) | |||
|
2SD2589 Darlington
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM-25(TO220)
Symbol
2SD2589
Unit
VCBO
110
V
VCEO
110
V
VEBO
5
V
IC
6
A
IB
1
A
PC
50(Tc=25°C)
W
Tj
150
°C
Tstg
â55 to +150
°C
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=â0.5A
VCB=10V, f=1MHz
2SD2589
100max
100max
110min
5000minâ
2.5max
3.0max
60typ
55typ
Unit
µA
µA
V
V
V
MHz
pF
âhFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton
tstg
tf
(V)
(â¦)
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
30
6
5
10
â5
5
â5
0.8typ 6.2typ 1.1typ
10.2±0.2
4.8±0.2
2.0±0.1
a
ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5
2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I Câ V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
2
IB=0.1mA
0
0
2
4
6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) â I B Characteristics (Typical)
3
I Câ V BE Temperature Characteristics (Typical)
(VCE=4V)
6
2
IC=5A
1
IC=3A
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
4
2
0
0
1
2
2.5
Base-Emittor Voltage VBE(V)
h FEâ I C Characteristics (Typical)
(VCE=4V)
40000
Typ
10000
5000
1000
500
200
0.02
0.1
0.5 1
56
Collector Current IC(A)
h FEâ I C Temperature Characteristics (Typical)
(VCE=4V)
40000
10000
125ËC
5000
25ËC
â30ËC
1000
500
100
0.02
0.1
0.5 1
56
Collector Current IC(A)
θ j-aâ t Characteristics
5
1
0.5
0.4
1
10
100
Time t(ms)
1000 2000
f Tâ I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
40
20
0
â0.02
â0.1
â1
â6
Emitter Current IE(A)
Safe Operating Area (Single Pulse)
PcâTa Derating
50
40
30
20
10
2 Without Heatsink
0
0
25
50
75
100 125 150
Ambient Temperature Ta(ËC)
161
|