2SD2557 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)

2SD2557 Darlington
Equivalent circuit C
B
(3.2kΩ)(450Ω) _E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SD2557
Unit
VCBO
200
V
VCEO
200
V
VEBO
6
V
IC
5
A
IB
2
A
PC
70(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=200V
VEB=6V
IC=10mA
VCE=5V, IC=1A
IC=1A, IB=5mA
VCE=10V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C)
2SD2557 Unit
100max
µA
5max
mA
200min
V
1500 to 6500
1.5max
V
15typ
MHz
110typ
pF
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
5
4
250mA
5
0
m
A
1
0
mA
2.5mA
3
1.2mA
0.6mA
2
0.3mA
1
0
0
2
4
6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
5
4
3
2
1
0
0
1
2
2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
8000
5000
(VCE=5V)
1000
500
100
50
125˚C
25˚C
–30˚C
10
5
0.02
0.1
0.5 1
5
Collector Current IC(A)
θ j-a– t Characteristics
5.0
1.0
0.5
0.3
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
156
Safe Operating Area (Single Pulse)
30
10
5
1
1 _{0 0 m5s0}
0m
ms
s
1
0.5
0.1
0.05
5
Without Heatsink
Natural Cooling
10
50
100
300
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
70
60
50
40
30
20
10
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)