2SD2081_01 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SD2081 Darlington
Equivalent C
circuit
B
(2kΩ) (200Ω) _E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)
Application : Driver for Solenoid, Motor and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
120
V
VCEO
120
V
VEBO
6
V
IC
10(Pulse15)
A
IB
1
A
PC
30(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=120V
IEBO
VEB=6V
V(BR)CEO
IC=10mA
hFE
VCE=4V, IC=5A
VCE(sat)
IC=5A, IB=5mA
VBE(sat)
IC=5A, IB=5mA
fT
VCE=12V, IE=–0.5A
COB
VCB=10V, f=1MHz
(Ta=25°C)
Ratings
Unit
10max
µA
10max
mA
120min
V
2000min
1.5max
2.0max
60typ
95typ
V
V
MHz
pF
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 ^c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Part No.
BCE
b. Lot No.
I C– V CE Characteristics (Typical)
15
10mA
5mA
3mA
2mA
10
1mA
5
0.7mA
IB=0.5mA
0
0
1
2
3
4
5
6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
IC=10A
1
5A
1A
0
0.2 0.5
1
5 10
Base Current IB(mA)
50 100 200
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
2
0
0
1
2
3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
20000
(VCE=4V)
10000
Typ
5000
1000
500
h FE– I C Temperature Characteristics (Typical)
20000
(VCE=4V)
10000
5000
125˚C
1000
25˚C
500
–30˚C
100
50
30
0.03
0.1
0.5 1
Collector Current IC(A)
5 10
100
50
30
0.03
0.1
0.5 1
Collector Current IC(A)
5 10
θ j-a– t Characteristics
5
1
0.5
0.2
1
10
100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=12V)
120
Typ
100
80
60
40
20
0
–0.05 –0.1
–0.5 –1
Emitter Current IE(A)
–5 –10
Safe Operating Area (Single Pulse)
30
10
10ms ^1ms
5
DC
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5
10
50
100 200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
145