2SD2016 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Igniter, Relay and General Purpose)

2SD2016 Darlington
Equivalent C
circuit
B
(2kΩ) (200Ω) _E
Silicon NPN Triple Diffused Planar Transistor
Application : Igniter, Relay and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
200
V
VEBO
6
V
IC
3
A
IB
0.5
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=200V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=1.5mA
IC=1A, IB=1.5mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
(Ta=25°C)
Ratings
10max
10max
200min
1000 to 15000
1.5max
2.0max
90typ
40typ
Unit
µA
mA
V
V
V
MHz
pF
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 ^c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Part No.
B C E _{b. Lot No.}
I C– V CE Characteristics (Typical)
3
3mA
1.5mA
1mA
0.5mA
2
IB^=0.3mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
125˚C
25˚C
–5 5 ˚ C
0
0.2
1
Base Current IB(mA)
2
1
0
3
0
1
2
Base-Emittor Voltage VBE(V)
10000
5000
h FE– I C Characteristics (Typical)
(VCE=4V)
1000
500
100
50
0.03
0.1
0.5
1
3
Collector Current IC(A)
h FE– I C Temperature Characteristics (Typical)
10000
5000
125˚C
(VCE=4V)
1000
500
25˚C
–55˚C
100
50
10
0.03
0.1
0.5
1
3
Collector Current IC(A)
θ j-a– t Characteristics
5
1
0.5
1
5 10
50 100
Time t(ms)
500 1000
f T– I E Characteristics (Typical)
(VCE=12V)
80
60
40
20
0
–0.01
–0.05 –0.1
–0.5 –1
–3
Emitter Current IE(A)
142
Safe Operating Area (Single Pulse)
Pc–Ta Derating
30
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
150x150x2
10
1 0 0 x1 _{0 0 x 2}
50x50x2
W
ith
Infinite
heatsink
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)