2SC5333 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Series Regulator, Switch, and General Purpose)

2SC5333
Silicon NPN Triple Diffused Planar Transistor
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC5333
Unit
VCBO
300
V
VCEO
300
V
VEBO
6
V
IC
2
A
IB
0.2
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
–55to+150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=300V
VEB=6V
IC=25mA
VCE=4V, IC=0.5A
IC=1.0A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VB2
IB1
IB2
(V)
(Ω)
(A)
(V)
(A)
(A)
100
100
1.0
–5
0.1
–0.2
ton
(µs)
0.3typ
Application : Series Regulator, Switch, and General Purpose
(Ta=25°C)
2SC5333
1.0max
1.0max
300min
30min
1.0max
10typ
75typ
Unit
mA
mA
V
V
MHz
pF
tstg
(µs)
4.0typ
tf
(µs)
1.0typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 ^c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
2
IB^=200mA
1
IB=20mA/stop
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
2
2
1
1
2A
IC=1A
0
0
0.1
0.2
0.3
0
0
0.2
0.4
0.6
0.8
1.0
Base Current IB(A)
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
200
100
Typ
50
h FE– I C Temperature Characteristics (Typical)
(VCE=4V)
200
100
125˚C
25˚C
50
–30˚C
θ j-a– t Characteristics
4
1
0.5
10
3
10
10
0.3
100
1000 2000
3 5 10
50 100
500 1000 2000
1
Collector Current IC(mA)
Collector Current IC(mA)
10
100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=12V)
20
Typ
10
Safe Operating Area (Single Pulse)
0
–0.003
134
–0.01
–0.05 –0.1
Emitter Current IE(A)
–0.5 –1
Pc–Ta Derating
35
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)