2SC5287_01 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
900
V
VCEO
550
V
VEBO
7
V
IC
5(Pulse10)
A
IB
2.5
A
PC
80(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1.8A
IC=1.8A, IB=0.36A
IC=1.8A, IB=0.36A
VCE=12V, IE=–0.35A
VCB=10V, f=1MHz
(Ta=25°C)
Ratings
100max
100max
550min
10 to 25
0.5max
1.2max
6typ
50typ
Unit
µA
µA
V
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
250
139
1.8
10
–5
0.27
IB2
(A)
–0.9
ton
(µs)
0.7max
tstg
(µs)
4.0max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
5
700mA
4
600mA
400mA
250mA
3
150mA
2
IB=50mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
1.5
IC/IB=5 Const.
1.0
VBE(sat)
0.5
0
0.03 0.05
VCE(sat)
0.1
0.5 1
Collector Current IC(A)
57
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
7
6
5
4
3
2
1
0
0
0.5
1.0
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40 _125˚C
(VCE=4V)
25˚C
–55˚C
10
5
4
0.02
0.05
0.1
0.5 1
Collector Current IC(A)
5 10
t on• t stg• t f– I C Characteristics (Typical)
6
5
VCC 250V
tstg
IC:IB1:IB2=1:0.15:–0.5
1
tf
0.5
ton
0.1
0.2
0.5
1
5
Collector Current IC(A)
θ j-a– t Characteristics
3
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
5
100_µs ^50µs
1
0.5
0.1
0.05
0.03
10
Without Heatsink
Natural Cooling
50
100
500
Collector-Emitter Voltage VCE(V)
134
Reverse Bias Safe Operating Area
20
10
5
1
0.5
0.1
0.05
0.03
50
Without Heatsink
Natural Cooling
IB2=–1.0A
L=3mH
Duty:less than 1%
100
500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)