English
Language : 

2SC5249 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC5249
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC5249
Unit
VCBO
600
V
VCEO
600
V
VEBO
7
V
IC
3(Pulse6)
A
IB
1.5
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=600V
IEBO
V(BR)CEO
VEB=7V
IC=10mA
hFE
VCE=4V, IC=1A
VCE(sat)
IC=1A, IB=0.2A
VBE(sat)
IC=1A, IB=0.2A
fT
VCE=12V, IE=–0.3A
COB
VCB=10V, f=1MHz
(Ta=25°C)
2SC5249 Unit
100max
µA
100max
µA
600min
V
20 to 40
0.5max
V
1.2max
V
6typ
MHz
50typ
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
200
200
1
10
–5
0.1
IB2
(A)
–0.1
ton
(µs)
1.0max
tstg
(µs)
19max
tf
(µs)
1.0max
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3
300mA
200mA
2
100mA
50mA
1
IB=20mA
VCE(sat)–IC Characteristics (Typical)
0.5
IC/IB=5 Const.
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
125˚C (Case Temp)
25˚C (Case Temp)
1
–55˚C (Case Temp)
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
0
0.01
0.05 0.1
0.5 1
3
Collector Current IC(A)
0
0
0.5
1.0
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
200
125˚C
100
25˚C
50
–55˚C
10
5
0.01
0.05 0.1
0.5 1
3
Collector Current IC(A)
t on• t stg• t f– I C Characteristics (Typical)
30
tstg
10
VCC 200V
5 IC:IB1:–IB2=10:1:1
1
0.5
0.2
0.1
ton
tf
0.5
1
3
Collector Current IC(A)
θ j-a– t Characteristics
3
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
7
5
1
0.5
0.1
0.05
10
Without Heatsink
Natural Cooling
50 100
500
Collector-Emitter Voltage VCE(V)
Reverse Bias Safe Operating Area
7
5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
–IB2=–1.0A
Duty:less than 1%
0.1
0.05
10
50
100
500
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
35
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
131