2SC5101_01 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
140
V
VEBO
6
V
IC
10
A
IB
4
A
PC
80(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings
ICBO
VCB=200V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
140min
hFE
VCE=4V, IC=3A
50min∗
VCE(sat)
IC=5A, IB=0.5A
0.5max
fT
VCE=12V, IE=–0.5A
20typ
COB
VCB=10V, f=1MHz
250typ
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Unit
µA
µA
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V)
(Ω)
60
12
IC
VBB1
VBB2
IB1
(A)
(V)
(V)
(A)
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
5
10
–5
0.5
–0.5 0.24typ 4.32typ 0.40typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
1.75
0.8
2.15
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
0.65
+0.2
-0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
10
300mA
200mA
150mA
8
100mA
75mA
6
50mA
4
20mA
2
10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
1
IC=10A
5A
0
0
0.5
1.0
1.5
2.0
Base Current IB(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
2
0
0
1
2
Base-Emitter Voltage VBE(V)
h FE– I C Characteristics (Typical)
200
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
300
(VCE=4V)
Typ
125˚C
100
100
25˚C
50
–30˚C
50
θ j-a– t Characteristics
3
1
0.5
20
0.02
0.1
0.5 1
Collector Current IC(A)
5 10
20
0.02
0.1
0.5
1
Collector Current IC(A)
5 10
0.1
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
–0.1
–1
–10
Emitter Current IE(A)
128
Safe Operating Area (Single Pulse)
30
10
5
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
3
5
10
50
100 200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)