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2SC5003 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Equivalent C
2SC5003 circuit
B
Built-in Damper Diode
(50Ω) E
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC5003
Unit
VCBO
1500
V
VCEO
800
V
VEBO
6
V
IC
7(Pulse14)
A
IB
3.5
A
PC
80(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO1
ICBO2
ICEO
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VFEC
fT
COB
Conditions
VCB=1200V
VCB=1500V
VCE=800V
IEB=300mA
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=5A, IB=1.2A
IC=5A, IB=1.2A
IEC=7A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
(V)
(Ω)
(A)
(V)
(V)
(A)
(A)
200
50
4
10
–5
0.8
–1.6
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25°C) External Dimensions FM100(TO3PF)
2SC5003
100max
1max
1max
6min
8min
4 to 9
5max
1.5max
2.0max
4typ
100typ
Unit
µA
mA
mA
V
V
V
V
MHz
pF
tstg
(µs)
4.0max
tf
(µs)
0.2max
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
7
1.7A
6
5
4
1.4A
900mA
600mA
3
300mA
2
IB=100mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat)–IC Characteristics (Typical)
3
(IC: IB=5 :1)
2
I C– V BE Temperature Characteristics (Typical)
(VCE=5V)
7
6
4
1
2
0
0.2
0.5
1
5
10
Collector Current IC(A)
0
0
0.5
1.0
1.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=5V)
50
125˚C
10
25˚C
–30˚C
5
t stg• t f– I C Characteristics (Typical)
20
10
5 tstg
V CC=.. 2 0 0 V
IC : IB1: –IB2 =5 :1: 2
1 tf
0.5
θ j-a– t Characteristics
3
1
0.5
2
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
57
0.1
0.2
0.5
1
Collector Current IC(A)
57
0.1
1
10
100
Time t(ms)
1000 2000
Safe Operating Area (Single Pulse)
20
100µs
10
5
Without Heatsink
Natural Cooling
1
100
500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
20
10
5
1
Without Heatsink
0.5
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
0.1
50
100
500 1000
Collector-Emitter Voltage VCE(V)
2000
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
25
50
75
100 125
Ambient Temperature Ta(˚C)
150
123