|
2SC4908 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | |||
|
2SC4908
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4908
Unit
VCBO
900
V
VCEO
800
V
VEBO
7
V
IC
3(Pulse6)
A
IB
1.5
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
â55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=0.7A
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
VCE=12V, IE=â0.3A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(â¦)
(A)
(V)
(V)
(A)
250
357
0.7
10
â5
0.1
IB2
(A)
â0.35
ton
(µs)
1max
(Ta=25°C)
2SC4908
100max
100max
800min
10 to 30
0.5max
1.2max
6typ
40typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45 +-00..12
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I Câ V CE Characteristics (Typical)
3
400mA
300mA
200mA
2
140mA
60mA
1
IB=20mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)âIC Temperature Characteristics (Typical)
2
IC/IB=5 Const,
I Câ V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
VBE(sat)
1
VCE(sat)
0
0.03 0.05 0.1
0.5 1
5
Collector Current IC(A)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FEâ I C Characteristics (Typical)
(VCE=4V)
50
125ËC
25ËC
â30ËC
10
5
2
0.02
0.05 0.1
0.5
1
3
Collector Current IC(A)
t on⢠t stg⢠t fâ I C Characteristics (Typical)
5
tstg
VCC 250V
IC:IB1:IB2=2:0.3:â1
1
tf
0.5
ton
0.2
0.1
0.5
1
3
Collector Current IC(A)
θ j-aâ t Characteristics
4
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
100µs
1
0.5
Without Heatsink
Natural Cooling
0.1
50
100
500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
10
5
1
Without Heatsink
0.5
Natural Cooling
L=3mH
IB2=â1.0A
Duty:less than 1%
0.1
50
100
500
Collector-Emitter Voltage VCE(V)
1000
PcâTa Derating
35
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(ËC)
121
|