2SC4512 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4512
Unit
VCBO
120
V
VCEO
80
V
VEBO
IC
IB
PC
Tj
Tstg
6
V
6
A
3
A
50(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC4512 Unit
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=120V
VEB=6V
IC=25mA
VCE=4V, IC=2A
IC=5A, IB=0.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
10max
10max
80min
50min
0.5max
20typ
110typ
µA
µA
V
V
MHz
pF
∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
30
10
3
10
–5
0.3
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
–0.3 0.16typ 2.60typ 0.34typ
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a
ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5
2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
200mA ^150mA
100mA
80mA
50mA
4
30mA
2
20mA
IB=10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
2
4
1
2
IC=6A
4A
2A
0
0
0
0.5
1.0
1.5
0
1
2
Base Current IB(A)
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
300
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
θ j-a– t Characteristics
5
100
50
30
0.02
100
Typ
50
0.1
0.5 1
Collector Current IC(A)
20
56
0.02
25˚C
–30˚C
0.1
0.5 1
Collector Current IC(A)
1
0.5
0.4
56
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
–0.1
–1
–6
Emitter Current IE(A)
Safe Operating Area (Single Pulse)
20
10
5
100ms
10ms
DC
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5
10
50
100
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
50
40
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
111