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2SC4466 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
120
V
VCEO
80
V
VEBO
6
V
IC
6
A
IB
3
A
PC
60(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=120V
VEB=6V
IC=50mA
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
10max
10max
80min
50min∗
1.5max
20typ
110typ
µA
µA
V
V
MHz
pF
∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
30
10
3
10
–5
0.3
IB2
(A)
–0.3
ton
(µs)
0.16typ
tstg
(µs)
2.60typ
tf
(µs)
0.34typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
200mA 150mA
100mA
80mA
50mA
4
30mA
2
20mA
IB=10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
2
4
1
2
IC=6A
4A
2A
0
0
0
0.5
1.0
1.5
0
1
2
Base Current IB(A)
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
300
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
θ j-a– t Characteristics
5
100
50
30
0.02
100
Typ
50
0.1
0.5 1
Collector Current IC(A)
20
56
0.02
25˚C
–30˚C
0.1
0.5 1
Collector Current IC(A)
1
0.5
0.3
56
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
–0.1
–1
–6
Emitter Current IE(A)
Safe Operating Area (Single Pulse)
20
10
5
1001m0sm1ms s
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
5
10
50
100
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
107