2SC4381_01 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) _{Application : TV Vertical Output, Audio Output Driver and General Purpose}
sAbsolute maximum ratings (Ta=25°C)
Ratings
Symbol
Unit
2SC4381 2SC4382
VCBO
150 200
V
VCEO
150 200
V
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=
(Ta=25°C)
Ratings
2SC4381 2SC4382 ^Unit
10max
µA
150 200
V
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 ^c0.5
VEBO
6
V
IEBO
VEB=6V
10max
µA
IC
2
A
V(BR)CEO
IC=25mA
150min 200min V
IB
1
A
hFE
VCE=10V, IC=0.7A
60min
ø3.3±0.2
a
b
PC
25(Tc=25°C)
W
VCE(sat) IC=0.7A, IB=0.07A
1.0max
V
Tj
150
°C
fT
VCE=12V, IE=–0.2A
Tstg
–55 to +150
°C
COB
VCB=10V, f=1MHz
15typ
35typ
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
20
20
1
10
–5
100
IB2
(mA)
–100
ton
(µs)
1.0typ
tstg
(µs)
3.0typ
MHz
pF
tf
(µs)
1.5typ
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
2
1.6
1.2
IB=5mA/Step
0.8
0.4
0
0
2
4
6
8
10
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=10V)
2
2
1
1
IC=0.5A
1A
2A
0
2
10
100
1000
0
0
0.5
1.0
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=10V)
400
h FE– I C Temperature Characteristics (Typical)
(VCE=10V)
400
Typ
100
125˚C
25˚C
100
–30˚C
50
30
0.01
0.1
Collector Current IC(A)
1
2
50
30
0.01
0.1
Collector Current IC(A)
1
2
θ j-a– t Characteristics
6
1
0.5
1
10
100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=12V)
30
20
Typ
Safe Operating Area (Single Pulse)
5
DC
1
Pc–Ta Derating
30
20
10
0
–0.01
102
–0.1
–0.5 –1 –2
Emitter Current IE(A)
0.1
0.01
1
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
12
10
100
300
Collector-Emitter Voltage VCE(V)
10
Without Heatsink
0
0
50
100
150
Ambient Temperature Ta(˚C)