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2SC4304_01 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
900
V
VCEO
800
V
VEBO
7
V
IC
3(Pulse6)
A
IB
1.5
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=0.7A
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
250
357
0.7
10
–5
0.1
IB2
(A)
–0.35
ton
(µs)
0.7max
(Ta=25°C)
Ratings Unit
100max
µA
100max
µA
800min
V
10 to 30
0.5max
V
1.2max
V
15typ
MHz
50typ
pF
tstg
(µs)
4.0max
tf
(µs)
0.7max
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.2±0.2
2.4±0.2
Weight : Approx 2.0g
BCE
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
3
700mA
500mA
300mA
2
200mA
100mA
1
IB=50mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
VCE(sat)
2
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
VBE(sat)
–55˚C (Case Temp)
25˚C (Case Temp)
1
125˚C (Case Temp)
0
0.01
0.05 0.1
0.5 1
3
Collector Current IC(A)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
5
2
0.01
0.05 0.1
0.5 1
3
Collector Current IC(A)
t on• t stg• t f– I C Characteristics (Typical)
7
5
VCC 250V
tstg
IC:IB1:–IB2=10:1.5:5
1
tf
0.5
ton
0.1
0.1
0.5
1
2
Collector Current IC(A)
θ j-a– t Characteristics
4
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
Reverse Bias Safe Operating Area
10
5
1
1
0.5
0.5
0.1
0.05
0.01
0.005
2
Without Heatsink
Natural Cooling
5 10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
0.1
0.05
0.01
0.005
50
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100
500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
35
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
101