2SC4300 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
900
V
VCEO
800
V
VEBO
7
V
IC
5(Pulse10)
A
IB
2.5
A
PC
75(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
250
125
2
10
–5
0.3
IB2
ton
(A)
(µs)
–1
1max
Application : Switching Regulator and General Purpose
(Ta=25°C)
Ratings Unit
100max
µA
100max
µA
800min
V
10 to 30
0.5max
V
1.2max
V
6typ
MHz
75typ
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E _{b. Lot No.}
I C– V CE Characteristics (Typical)
5
700mA
600mA
4
500mA
400mA
300mA
3
200mA
2
IB=100mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
5
2
1
–55˚C (Case ^Temp)
25˚C (Case ^Temp)
125˚C ^{(Case Temp)}
VBE(sat)
VCE(sat)
125˚C ^(Case
0
0.03 0.05 0.1
0.5 1
5 10
Collector Current IC(A)
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
5
0.02 0.05 0.1
0.5 1
5
Collector Current IC(A)
t on• t stg• t f– I C Characteristics (Typical)
10
5 _{VCC 250V}
tstg
IC:IB1:–IB2
=2:0.3:1 Const.
1
tf
0.5
ton
0.2
0.1
0.5
1
5
Collector Current IC(A)
θ j-a– t Characteristics
2
1
0.5
0.1
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
5
1ms ^100µs
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
10
50 100
500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
20
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.01
50
100
500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
50
100
Ambient Temperature Ta(˚C)
150
99