2SC4297 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) _{Application : Switching Regulator and General Purpose}
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4297
Unit
VCBO
500
V
VCEO
400
V
VEBO
10
V
IC
12(Pulse24)
A
IB
4
A
PC
75(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
200
28.5
7
10
–5
0.7
IB2
(A)
–1.4
ton
(µs)
1max
(Ta=25°C)
2SC4297
100max
100max
400min
10 to 30
0.5max
1.3max
10typ
105typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
3max
tf
(µs)
0.5max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65 ^+-00..12
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
12
1A
10
800mA
600mA
8
400mA
6
200mA
4
IB=100mA
2
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C ^{(Case Temp)}
25˚C ^{(Case Temp)}
125˚C ^{(Case Temp)}
VBE(sat)
VCE(sat)
125˚C
–55˚C
0
0.02 0.05 0.1
0.5 1
5 10
Collector Current IC(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
12
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–30˚C
10
t on• t stg• t f– I C Characteristics (Typical)
8
5
tstg
VCC 200V
IC:IB1:–IB2=10:1:2
1
0.5
ton
θ j-a– t Characteristics
2
1
0.5
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10 12
0.1
0.5
tf
1
5
Collector Current IC(A)
0.1
10
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
100_µs
10
5
1
0.5
Without Heatsink
Natural Cooling
0.1
5
10
50 100
500
Collector-Emitter Voltage VCE(V)
Reverse Bias Safe Operating Area
30
10
5
1
Without Heatsink
Natural Cooling
0.5
L=3mH
–IB2=1A
Duty:less than 1%
0.1
5
10
50 100
500
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
50
100
Ambient Temperature Ta(˚C)
150
95