2SC4296 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) _{Application : Switching Regulator and General Purpose}
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4296
Unit
VCBO
500
V
VCEO
400
V
VEBO
10
V
IC
10(Pulse20)
A
IB
4
A
PC
75(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=6A
IC=6A, IB=1.2A
IC=6A, IB=1.2A
VCE=12V, IE=–0.7A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
200
33
6
10
–5
0.6
IB2
(A)
–1.2
ton
(µs)
1max
(Ta=25°C)
2SC4296 Unit
100max
µA
100max
µA
400min
V
10 to 30
0.5max
1.3max
10typ
85typ
V
V
MHz
pF
tstg
(µs)
3max
tf
(µs)
0.5max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
1.75
0.8
2.15
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
0.65
+0.2
-0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E _{b. Lot No.}
I C– V CE Characteristics (Typical)
10
1.2A
1A
8
600mA
400mA
6
4
200mA
IB=100mA
2
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1.4
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
1
6
VBE(sat)
4
VCE(sat)
0
0.02 0.05 0.1
0.5 1
Collector Current IC(A)
5 10
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
100
50
125˚C
25˚C
–55˚C
10
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
t on• t stg• t f– I C Characteristics (Typical)
10
5
tstg
VCC 200V
IC:IB1:–IB2=10:1:2
1
0.5
ton
0.1
0.1
tf
0.5
1
Collector Current IC(A)
5
10
θ j-a– t Characteristics
3
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
10
10ms
1ms
100_µs ^50µs
5
Reverse Bias Safe Operating Area
30
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.02
5
10
50 100
500
Collector-Emitter Voltage VCE(V)
94
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
0.02
5
10
50 100
500
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
50
100
150
Ambient Temperature Ta(˚C)