2SC4130 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Epitaxial Planar Transistor(Switching Regulator and General Purpose)

2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4130
Unit
VCBO
500
V
VCEO
VEBO
IC
IB
PC
Tj
Tstg
400
V
10
V
7(Pulse14)
A
2
A
30(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
200
67
3
10
–5
0.3
IB2
(A)
–0.6
ton
(µs)
1max
(Ta=25°C)
2SC4130 Unit
100max
µA
100max
µA
400min
V
10 to 30
0.5max
1.3max
15typ
50typ
V
V
MHz
pF
tstg
(µs)
2.2max
tf
(µs)
0.5max
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 ^c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
7
1000mA
6
600mA
400mA
4
200mA
100mA
2
50mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
2
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
7
6
1
0
0.02
–55˚C (Case ^Temp)
25˚C ^{(Case Temp)}
125˚C ^{(Case Temp)}
VCE(sat)
VBE(sat)
125˚C ^{(Case T}
0.05 0.1
0.5 1
Collector Current IC(A)
–55˚C
57
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
2
0.02
0.05
0.1
0.5 1
Collector Current IC(A)
57
t on• t stg• t f– I C Characteristics (Typical)
5
VCC 200V
tstg
IC:IB1:–IB2=10:1:2
1
0.5
0.1
0.2
ton
tf
0.5
1
Collector Current IC(A)
57
θ j-a– t Characteristics
4
1
0.5
0.3
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
5
DC
10ms ^1ms
100_µs
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
2
88
5 10
50 100
500
Collector-Emitter Voltage VCE(V)
Reverse Bias Safe Operating Area
20
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
0.01
2
5 10
50 100
500
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)