2SC3927_07 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
900
V
VCEO
550
V
VEBO
7
V
IC
10(Pulse15)
A
IB
5
A
PC
120(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=800V
IEBO
VEB=7V
V(BR)CEO
IC=10mA
hFE
VCE=4V, IC=5A
VCE(sat)
IC=5A, IB=1A
VBE(sat)
IC=5A, IB=1A
fT
VCE=12V, IE=–1A
COB
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
250
50
5
10
–5
0.75
IB2
(A)
–1.5
ton
(µs)
1max
(Ta=25°C)
Ratings Unit
100max
µA
100max
µA
550min
V
10 to 28
0.5max
V
1.2max
V
6typ
MHz
105typ
pF
tstg
(µs)
5max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
10
1.2A
8
1A
800mA
600mA
6
400mA
4
200mA
IB=100mA
2
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C ^{(Case Temp)}
25˚C ^{(Case Temp)}
125˚C ^{(Case Temp)}
VBE(sat)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
0
0.02
VCE(sat)
125˚C
–55˚C
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
t on• t stg• t f– I C Characteristics (Typical)
10
5
tstg
VCC 250V
IC:IB1:–IB2=10:1.5:3
1
0.5
ton
θ j-a– t Characteristics
2
1
0.5
0.1
0.2
tf
0.5
1
5
Collector Current IC(A)
0.1
10
1
10
100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
DC
10ms
1ms
100_µs
5
Reverse Bias Safe Operating Area
20
10
5
Pc–Ta Derating
120
100
1
1
0.5
0.5
0.1
0.05
0.02
10
Without Heatsink
Natural Cooling
50
100
Collector-Emitter Voltage VCE(V)
500 600
0.1
0.05
0.02
50
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100
500
Collector-Emitter Voltage VCE(V)
1000
50
3.5 ^{Without Heatsink}
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
83