2SC3858_07 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor

2SC3858
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
200
V
VEBO
6
V
IC
17
A
IB
5
A
PC
200(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO
IEBO
V(BR)CEO
VCB=200V
VEB=6V
IC=50mA
100max
µA
100max
µA
200min
V
hFE
VCE(sat)
fT
COB
∗hFE Rank
VCE=4V, IC=8A
50min∗
IC=10A, IB=1A
2.5max
VCE=12V, IE=–1A
20typ
VCB=10V, f=1MHz
300typ
Y(50 to 100), P(70 to 140), G(90 to 180)
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
40
4
10
10
–5
1
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
–1
0.5typ 1.8typ 0.6typ
External Dimensions MT-200
2-ø3.2±0.1
36.4±0.3
24.4±0.2
6.0±0.2
2.1
9
a
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
3.0
+0.3
-0.1
BCE
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
17
1A _700mA
500mA
15
300mA
200mA
10
100mA
5
50mA
IB=20mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
17
15
10
1
IC=15A
10A
5A
0
0
1
2
3
Base Current IB(A)
5
0
0
1
2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
300
100
Typ
50
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
100
25˚C
50
–30˚C
θ j-a– t Characteristics
2
1
0.5
20
0.02
0.1
0.5 1
Collector Current IC(A)
5 10 17
10
0.02
0.1
0.5 1
Collector Current IC(A)
5 10 17
0.1
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
30
Typ
20
10
0
–0.02
–0.1
–1
–10
Emitter Current IE(A)
Safe Operating Area (Single Pulse)
50
20ms 10m3ms _s
DC
10
5
1
0.5 _{Without Heatsink}
Natural Cooling
0.1
2
10
100
300
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
200
160
120
80
40
Without Heatsink
5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
81