2SC3179 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC3179
Unit
VCBO
80
V
VCEO
60
V
VEBO
6
V
IC
4
A
IB
1
A
PC
30(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=80V
VEB=6V
IC=25mA
VCE=4V, IC=1V
IC=2A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
20
10
2
10
–5
200
IB2
(mA)
–200
ton
(µs)
0.2typ
(Ta=25°C)
2SC3179 Unit
100max
µA
100max
µA
60min
V
40min
0.6max
V
15typ
MHz
60typ
pF
tstg
(µs)
1.9typ
tf
(µs)
0.29typ
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a
ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5
2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
4
I^B=100mA
80mA
3
60mA
40mA
30mA
2
20mA
1
10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
1.0
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
4
3
0.5
3A
2A
IC=1A
0
0.005 0.01
0.05 0.1
Base Current IB(A)
0.5 1
2
1
0
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
500
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
(VCE=4V)
Typ
100
50
125˚C
100
25˚C
–30˚C
50
θ j-a– t Characteristics
5
1
20
0.01
0.1
0.5 1
Collector Current IC(A)
20
4
0.02
0.1
0.5 1
Collector Current IC(A)
0.5
4
1
10
100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
20
Typ
10
0
–0.005 –0.01
–0.1
–0.5 –1
–4
Emitter Current IE(A)
62
Safe Operating Area (Single Pulse)
10
5
DC
1
0.5
0.2
3
Without Heatsink
Natural Cooling
10
50
100
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)