2SC2921_07 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Epitaxial Planar Transistor

LAPT 2SC2921
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
Ratings
VCBO
160
VCEO
160
VEBO
IC
IB
PC
Tj
Tstg
5
15
4
150(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO
VCB=160V
100max
µA
IEBO
VEB=5V
100max
µA
V(BR)CEO
hFE
IC=25mA
VCE=4V, IC=5A
160min
V
50min∗
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
fT
VCE=12V, IE=–2A
60typ
MHz
COB
VCB=10V, f=1MHz
200typ
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VB2
IB1
(V)
(Ω)
(A)
(V)
(mA)
60
12
5
–5
500
IB2
(mA)
–500
ton
(µs)
0.2typ
tstg
(µs)
1.5typ
tf
(µs)
0.35typ
External Dimensions MT-200
2-ø3.2±0.1
36.4±0.3
24.4±0.2
6.0±0.2
2.1
9
a
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
3.0
+0.3
-0.1
BCE
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
15
600mA ^500mA
400mA
300mA
200mA
10
150mA
100mA
5
50mA
IB=20mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
15
2
10
1
IC=10A
5A
0
0
0.2
0.4
0.6
0.8
1.0
Base Current IB(A)
5
0
0
1
2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
200
(VCE=4V)
100
Typ
50
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
100
25˚C
–30˚C
50
θ j-a– t Characteristics
2
1
0.5
10
0.02
0.1
0.5 1
Collector Current IC(A)
10 15
20
0.02
0.1
0.5 1
Collector Current IC(A)
5 10 15
0.1
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
40
Safe Operating Area (Single Pulse)
40
10ms
10
DC
5
Pc–Ta Derating
160
120
80
20
0
–0.02
–0.1
–1
Emitter Current IE(A)
1
40
Without Heatsink
Natural Cooling
0.5
0.3
–10
2
10
100 200
Without Heatsink
5
0
0
25
50
75
100 125 150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
61