2SC2837 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,150V,100W)

LAPT 2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
150
V
VCEO
150
V
VEBO
5
V
IC
10
A
IB
2
A
PC
100(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=150V
VEB=5V
IC=25mA
VCE=4V, IC=3V
IC=5A, IB=0.5A
VCE=12V, IE=–1A
VCB=80V, f=1MHz
Ratings
100max
100max
150min
50min∗
2.0max
70typ
60typ
Unit
µA
µA
V
V
MHz
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VB2
IB1
(V)
(Ω)
(A)
(V)
(mA)
60
12
5
–5
500
IB2
(mA)
–500
ton
(µs)
0.2typ
tstg
(µs)
1.4typ
tf
(µs)
0.35typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
10
400mA
300mA
8
200mA
160mA
120mA
6
80mA
4
40mA
IB=20mA
2
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
1
IC=10A
5A
0
0
0.5
1.0
1.5
2.0
Base Current IB(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
2
0
0
1
2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
200
(VCE=4V)
Typ
100
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
25˚C
100
–30˚C
50
50
θ j-a– t Characteristics
3
1
0.5
20
0.02
0.1
1
Collector Current IC(A)
20
10
0.02 0.05 0.1
0.5 1
Collector Current IC(A)
5 10
0.2
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
120
100
Typ
80
60
40
20
0
–0.02
–0.1
–1
–6
Emitter Current IE(A)
60
Safe Operating Area (Single Pulse)
30
Pc–Ta Derating
100
10
DC
5
1
Without Heatsink
0.5
Natural Cooling
0.2
2
10
100 200
Collector-Emitter Voltage VCE(V)
50
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)