2SA1262 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SA1262
VCBO
–60
VCEO
–60
VEBO
–6
IC
–4
IB
–1
PC
30(Tc=25°C)
Tj
150
Tstg
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=–60V
IEBO
VEB=–6V
V(BR)CEO
IC=–25mA
hFE
VCE=–4V, IC=–1A
VCE(sat)
IC=–2A, IB=–0.2A
fT
VCE=–12V, IE=0.2A
COB
VCB=–10V, f=1MHz
(Ta=25°C)
2SA1262 Unit
–100max
µA
–100max
µA
–60min
V
40min
–0.6max
V
15typ
MHz
90typ
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
–20
10
–2
–10
5
–200
IB2
(mA)
200
ton
(µs)
0.25typ
tstg
(µs)
0.75typ
tf
(µs)
0.25typ
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a
ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5
2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–4
–80mA
–60mA
–50mA
–40mA
–3
–30mA
–2
–20mA
–10mA
–1
IB=–5mA
0
0
–1
–2
–3
–4
–5
–6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
–1.5
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–4
–1.0
–0.5
0
–0.1
–1A
–2A
IC=–3A
–0.5 –0.1
Base Current IB(A)
–0.5 –1
–3
–2
–1
0
0
–0.5
–1.0
–1.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=–4V)
500
Typ
100
50
h FE– I C Temperature Characteristics (Typical)
(VCE=–4V)
200
125˚C
100
25˚C
–30˚C
50
20
–0.01
–0.1
–0.5 –1
20
–4
–0.02
–0.1
–1
–4
Collector Current IC(A)
Collector Current IC(A)
θ j-a– t Characteristics
5
1
0.7
1
10
100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=–12V)
60
50
40
Typ
30
20
10
0
0.005 0.01
0.05 0.1
0.5 1
3
Emitter Current IE(A)
14
Safe Operating Area (Single Pulse)
–10
–5
DC
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
–2
–5
–10
–50
Collector-Emitter Voltage VCE(V)
–100
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)