K7A403600B Datasheet, PDF (9/18 Pages) Samsung semiconductor – 128Kx36/x32 & 256Kx18 Synchronous SRAM

K7A403600B
K7A403200B
K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS(TA=0 to 70°C, VDD=3.3V+0.3V/-0.165V)
PARAMETER
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
SYMBOL
TEST CONDITIONS
IIL VDD = Max ; VIN=VSS to VDD
IOL Output Disabled, VOUT=VSS to VDDQ
Device Selected, IOUT=0mA, ZZ≤VIL,
-16
ICC
All Inputs=VIL or VIH , Cycle Time ≥cyc Min
-14
ISB
Device deselected, IOUT=0mA,ZZ≤VIL,
f=Max, All Inputs≤0.2V or ≥ VDD-0.2V
-16
-14
ISB1
Device deselected, IOUT=0mA, ZZ≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
ISB2
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH
VOL IOL = 8.0mA
VOH IOH = -4.0mA
VOL IOL = 1.0mA
VOH IOH = -1.0mA
VIL
VIH
VIL
VIH
The above parameters are also guaranteed at industrial temperature range.
* VIL(Min)=-2.0(Pulse Width ≤ tCYC/2)
** VIH(Max)=4.6(Pulse Width ≤ tCYC/2)
** In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
MIN
MAX UNIT
-2
+2
µA
-2
+2
µA
-
290
mA
-
250
-
140
mA
-
130
-
80
mA
-
50
mA
-
0.4
V
2.4
-
V
-
0.4
V
2.0
-
V
-0.5*
0.8
V
2.0 VDD+0.3** V
-0.3*
0.7
V
1.7 VDD+0.3** V
TEST CONDITIONS
(VDD=3.3V+0.3V/-0.165V,VDDQ=3.3V+0.3/-0.165V or VDD=3.3V+0.3V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0 to 70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O)
1ns
Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O)
1ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
-9-
Nov 2001
Rev 1.0