K4S510432B-UC Datasheet, PDF (9/15 Pages) Samsung semiconductor – 512Mb B-die SDRAM Specification

SDRAM 512Mb B-die (x4, x8, x16)
DC CHARACTERISTICS (x8)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
ICC4
IO = 0 mA
Page burst
ICC5 tRC ≥ tRC(min)
C
ICC6 CKE ≤ 0.2V
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510832B-UC75
4. K4S510832B-UL75
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
CMOS SDRAM
Version
75
90
2
2
20
10
6
6
30
25
100
200
6
3
Unit Note
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
3
uA
4
Revision. 1.1 August 2004