M464S1724ETS Datasheet, PDF (8/15 Pages) Samsung semiconductor – 64MB, 128MB Unbuffered SODIMM

64MB, 128MB Unbuffered SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1.0 * # of component
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
SDRAM
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
ILI
-10
3.0
VDDQ+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
M464S0924ETS
M464S1724ETS
Unit
Symbol
Min
Max
Min
Max
Input capacitance (A0 ~ A11, BA0 ~ BA1)
CIN1
15
25
25
45
pF
Input capacitance (RAS, CAS, WE)
CIN2
15
25
25
45
pF
Input capacitance (CKE0 ~ CKE1)
CIN3
15
25
15
25
pF
Input capacitance (CLK0 ~ CLK1)
CIN4
15
21
15
21
pF
Input capacitance (CS0 ~ CS1)
CIN5
15
25
15
25
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
10
12
10
12
pF
Data input/output capacitance (DQ0 ~ DQ63)
COUT
10
12
10
12
pF
Rev. 1.4 March. 2004