K4M56163PE-R Datasheet, PDF (8/12 Pages) Samsung semiconductor – 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F
Mobile-SDRAM
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
Parameter
Symbol
-90
Min
Max
CLK cycle time
CAS latency=3
tCC
9.0
CLK cycle time
CAS latency=2
tCC
12
1000
CLK cycle time
CAS latency=1
tCC
-
CLK to valid output delay
CAS latency=3
tSAC
7
CLK to valid output delay
CAS latency=2
tSAC
9
CLK to valid output delay
CAS latency=1
tSAC
-
Output data hold time
CAS latency=3
tOH
2.5
Output data hold time
CAS latency=2
tOH
2.5
Output data hold time
CAS latency=1
tOH
2.5
CLK high pulse width
tCH
3.0
CLK low pulse width
tCL
3.0
Input setup time
tSS
2.0
Input hold time
tSH
1.0
CLK to output in Low-Z
tSLZ
1
CAS latency=3
7
CLK to output in Hi-Z
CAS latency=2
tSHZ
9
CAS latency=1
-
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
-1L
Min
Max
9.5
15
1000
25
7
10
20
2.5
2.5
2.5
3.0
3.0
2.0
1.5
1
7
10
20
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
February 2004