S1L9223B02 Datasheet, PDF (7/36 Pages) Samsung semiconductor – RF AMP & SERVO SIGNAL PROCESSOR

RF AMP & SERVO SIGNAL PROCESSOR
S1L9223B02
ABSOLUTE MAXIMUM RATINGS
Characteristic
Supply Voltage
Power Dissipation
Operating Temperature
Storage temperature
Symbol
V_MAX
P_D
T_OPR
T_STG
Value
6
150
−20 to + 70
−55 to + 150
Unit
V
mW
o_C
o_C
ELECTRICAL CHARACTERISTICS
(Ta = 25°C, V_DD = D_VDD = V_CC = +3.2V, V_SS = D_VSS = GND = V_SSP = 0V)
Characteristic
Symbol
Test Conditions
Output Min. Typ. Max. Unit
Supply Current High
ICCHI V_CC = 3.6V, No load
−
12 27 42 mA
Supply Current Typ
ICCTY V_CC = 3.2V, No Load
−
8
23 38 mA
RF Amp Offset Voltage
Vrfo
Input open
−80 0 +80 mV
RF Amp Voltage Gain
Grf
SG3 f = 10kHz,
40mVp-p, sine
25.1 28.1 31.1 dB
RF THD
Rfthd
SG3 f =1kHz, 40mVp-p,sine _{pin 73}
−
−
5
%
RF Amp Max. Output Voltage Vrfpp1 SG3 DC 1.8V
2.8
−
−
V
RF Amp Min. Output Voltage Vrfpp2 SG3 DC 1.4V
−
−
0.6
V
RF oscillation voltage
Rfosc1 Input open
0
50 100 mV
Focus Error Amp Offset
Voltage
Vfeo1 input open
−450 −250 −50 mV
Focus Error Amp Auto Offset Vfeo2
Voltage
WDCH=88.2kHz Pulse,
$841
−35 0
35 mV
Focus Error Amp PD1
Voltage Gain
Gfe1
SG3 f=10kHz, 32mVp-p,
sine
27 30 33 dB
Focus Error Amp PD2
Voltage Gain
Gfe2
SG3 f = 10kHz, 32mVp-p,
sine
pin 58 ²⁷
30
33
dB
Focus Error Amp Voltage
Difference
Gfe∆
∆Gfe1-∆Gfe1
−3
0
+3 dB
Focus Error Amp Max.
Output Voltage
Gfepp1 SG3 DC 2.7V
2.7
−
−
V
Focus Error Amp Min. Output Gfepp2 SG3 DC2.3V
Voltage
−
−
0.6
V
ISTAT output status
Vistat1 $878+$87F+$840
Pin 30 2.7
-
-
V
7