MR18R326GAG0 Datasheet, PDF (7/14 Pages) Samsung semiconductor – (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

MR18R326GAG0
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Min
V_I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
- 0.3
V_DD,ABS
Voltage on VDD with respect to Gnd
- 0.5
T_STORE
Storage temperature
- 50
T_PLATE
Plate temperature
-
DC Recommended Electrical Conditions
Table 5: DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Min
V_DD
V_CMOS
Supply voltage
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
2.50 - 0.13
V_DD
1.8 - 0.1
V_REF
V_SPD
Reference voltage
Serial Presence Detector- Positive power supply
1.4 - 0.2
2.2
Max
Unit
V_DD + 0.3
V
V_DD + 1.0
V
100
°C
92
°C
Max
Unit
2.50 + 0.13
V
V_DD
V
1.8 + 0.2
V
1.4 + 0.2
V
3.6
V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
Number of 576Mb RDRAM devices
1152MB
16
Page 6
Version 1.0 Mar. 2004