M470L6423EN Datasheet, PDF (7/13 Pages) Samsung semiconductor – 512MB Unbuffered SODIMM(based on sTSOP)

512MB Unbuffered SODIMM(based on sTSOP)
DDR SDRAM
DDR SDRAM IDD spec table
M470L6423EN0 [ (32M x 8) * 8, 512MB Non ECC Module ]
(V_DD=2.7V, T = 10°C)
Symbol
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5) Unit
Notes
IDD0
1,160
1,000
1,000
mA
IDD1
1,360
1,200
1,200
mA
IDD2P
48
48
48
mA
IDD2F
400
320
320
mA
IDD2Q
320
290
290
mA
IDD3P
560
480
480
mA
IDD3N
880
720
720
mA
IDD4R
1,720
1,480
1,480
mA
IDD4W
1,720
1,440
1,440
mA
IDD5
1,800
1,640
1,640
mA
IDD6
Normal
48
48
48
mA
Low power
24
24
24
mA Optional
IDD7A
2,680
2,360
2,360
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.3 March. 2004