KMM5328004CSW Datasheet, PDF (7/21 Pages) Samsung semiconductor – 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

DRAM MODULE
KMM5328004CSW/CSWG
AC CHARACTERISTICS (0°C≤TA≤70°C, Vcc=5.0V±10%. See notes 1,2.)
Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.0/0.8V, output loading CL=100pF
Parameter
Hyper page mode cycle time
CAS precharge time (Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
W pulse width
Symbol
tHPC
tCP
tRASP
tRHCP
tWRP
tWRH
tDOH
tREZ
tWEZ
tWED
tWPE
-5
Min
Max
20
8
50
200K
30
10
10
5
3
13
3
13
15
5
-6
Min
Max
25
10
60
200K
35
10
10
5
3
15
3
15
15
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
11
6,12
6
NOTES
1. An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are ref-
erence levels for measuring timing of input signals. Transition
times are measured between VIH(min) and VIL(max) and are
assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 2 TTL loads and 100pF.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. These parameters are referenced to the CAS leading edge in
early write cycles.
10. Operation within the tRAD(max) limit insures that tRAC(max)
can be met. tRAD(max) is specified as reference point only. If
tRAD is greater than the specified tRAD(max) limit access time
is controlled by tAA.
4. Operation within the tRCD(max) limit insures that tRAC(max)
can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then
access time is controlled exclusively by tCAC.
5. Assumes that tRCD≥tRCD(max).
11. tASC≥6ns, Assume tT=2.0ns.
12. If RAS goes high before CAS high going, the open circuit
condition of the output is achieved by CAS high going. If CAS
goes high before RAS high going , the open circuit condition
of the output is achieved by RAS going.
6. This parameter defines the time at which the output achieves
the open circuit and is not referenced for VOH or VOL.
7. tWCS is non-restrictive operating parameter. It is included in
the data sheet as electrical characteristics only. If
tWCS≥tWCS(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.