M390S2858CTU Datasheet, PDF (6/12 Pages) Samsung semiconductor – PC133/PC100 Low Profile Registered DIMM

M390S2858CTU
PC133/PC100 Low Profile Registered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4
Page burst
4Banks activated
tCCD = 2CLKs
Refresh current
ICC5 tRC ≥ tRC(min)
Self refresh current
ICC6 CKE ≤ 0.2V
Notes : _{1. Measured with outputs open.}
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Version
Unit Note
- 7C -7A -1H -1L
2840 2660 2660 2660 mA 1
422
mA
74
1070
mA
362
566
mA
218
1430
mA
902
mA
3020 3020 2840 2840 mA 1
5000 4640 4460 4460 mA 2
458
mA
Rev. 0.1 Sept. 2001