KM41C4000D Datasheet, PDF (6/20 Pages) Samsung semiconductor – 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

KM41C4000D, KM41V4000D
CMOS DRAM
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 2)
Parameter
Symbol
Data set-up time
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS-before-RAS refresh)
CAS hold time (CAS-before-RAS refresh)
RAS to CAS precharge time
CAS precharge time (C-B-R counter test cycle)
Access time from CAS precharge
Fast Page mode cycle time
Fast Page read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS Hold time (C-B-R self refresh)
Note) *1 : 5V only
tDS
tDH
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPT
tCPA
tPC
tPRWC
tCP
tRASP
tRHCP
tWTS
tWTH
tWRP
tWRH
tRASS
tRPS
tCHS
-5^*1
Min Max
0
10
16
128
0
15
50
25
30
10
10
5
20
30
35
53
10
50 200K
30
10
10
10
10
100
90
-50
-6
Min Max
0
10
16
128
0
15
60
30
35
10
10
5
20
35
40
60
10
60 200K
35
10
10
10
10
100
110
-50
-7
Min Max
0
15
16
128
0
20
70
35
40
10
15
5
25
40
45
70
10
70 200K
40
10
10
10
10
100
130
-50
Units
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Notes
9
9
7
7
7
7
7
3
14,15,16
14,15,16
14,15,16