K4S281632C Datasheet, PDF (6/11 Pages) Samsung semiconductor – 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

K4S281632C
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4 ^{Page burst}
4Banks Activated
tCCD = 2CLKs
Refresh current
ICC5 tRC ≥ tRC(min)
C
Self refresh current
ICC6 CKE ≤ 0.2V
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632C-TC**
4. K4S281632C-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
CMOS SDRAM
Version
Unit Note
-75
-1H
-1L
150
140
140 mA 1
1
mA
1
20
mA
7
5
mA
5
30
mA
20
mA
180
145
145 mA 1
220
210
210 mA 2
1.5
mA 3
800
uA 4
Rev. 0.0 Mar. 2000