M464S3323BN0 Datasheet, PDF (5/9 Pages) Samsung semiconductor – 144pin SDRAM SODIMM

M464S3323BN0
Shrink-TSOP
144pin SDRAM SODIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
ICC2NS
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4
Page burst
4Banks activated
tCCD = 2CLKs
Refresh current
ICC5 tRC ≥ tRC(min)
C
Self refresh current
ICC6 CKE ≤ 0.2V
L
Version
-1H
-1L
1,120
16
16
320
112
80
80
480
320
1,240
1,920
24
12.8
Unit Note
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
mA
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)