M390S6450CT1 Datasheet, PDF (5/12 Pages) Samsung semiconductor – 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD

M390S6450CT1
PC133 Registered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
Unit
-1.0 ~ 4.6
V
-1.0 ~ 4.6
V
-55 ~ +150
°C
18
W
50
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Symbol
Min
VDD
3.0
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
ILI
-10
Typ
Max
Unit
3.3
3.6
V
3.0
VDDQ+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Parameter
Symbol
Min
Input capacitance (A0 ~ A12)
CIN1
-
Input capacitance (RAS, CAS, WE)
CIN2
-
Input capacitance (CKE0)
CIN3
-
Input capacitance (CLK0)
CIN4
-
Input capacitance (CS0, CS2)
CIN5
-
Input capacitance (DQM0 ~ DQM7)
CIN6
-
Input capacitance (BA0 ~ BA1)
CIN7
-
Data input/output capacitance (DQ0 ~ DQ63)
COUT
-
Data input/output capacitance (CB0 ~ CB7)
COUT1
-
Max
15
15
15
20
15
15
15
16
16
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
Rev. 0.2 Sept. 2001