M366S6453CTS Datasheet, PDF (5/11 Pages) Samsung semiconductor – PC133/PC100 Unbuffered DIMM

M366S6453CTS
PC133/PC100 Unbuffered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Version
Unit Note
-7C -7A -1H -1L
1040 960 960 960 mA 1
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
ICC2P
ICC2PS
ICC2N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
32
mA
32
320
mA
160
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
96
mA
96
480
mA
400
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4 ^{Page burst}
4banks Activated.
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
1120 1120 1040 1040 mA 1
2,000 1,840 1,760 1,760 mA 2
C
48
mA
L
24
mA
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
REV. 0.0 Sept. 2001