K7M803625B_06 Datasheet, PDF (5/19 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Flow-Through NtRAM

K7M803625B
K7M801825B
256Kx36 & 512Kx18 Flow-Through NtRAM^TM
PIN CONFIGURATION(TOP VIEW)
DQPc
1
DQc0
2
DQc1
3
VDDQ
4
VSSQ
5
DQc2
6
DQc3
7
DQc4
8
DQc5
9
VSSQ
10
VDDQ
11
DQc6
12
DQc7
13
Vss
14
VDD
15
VDD
16
VSS
17
DQd0
18
DQd1
19
VDDQ
20
VSSQ
21
DQd2
22
DQd3
23
DQd4
24
DQd5
25
VSSQ
26
VDDQ
27
DQd6
28
DQd7
29
DQPd
30
100 Pin TQFP
(20mm x 14mm)
K7M803625B(256Kx36)
80
DQPb
79
DQb7
78
DQb6
77
VDDQ
76
VSSQ
75
DQb5
74
DQb4
73
DQb3
72
DQb2
71
VSSQ
70
VDDQ
69
DQb1
68
DQb0
67
VSS
66
VSS
65
VDD
64
ZZ
63
DQa7
62
DQa6
61
VDDQ
60
VSSQ
59
DQa5
58
DQa4
57
DQa3
56
DQa2
55
VSSQ
54
VDDQ
53
DQa1
52
DQa0
51
DQPa
PIN NAME
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A0 - A17
Address Inputs
ADV
Address Advance/Load
WE
Read/Write Control Input
CLK
Clock
CKE
Clock Enable
CS1
Chip Select
CS2
Chip Select
CS2
Chip Select
BWx(x=a,b,c,d) Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
LBO
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
VDD
VSS
N.C.
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
VDDQ
VSSQ
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
No Connect
38,39,42,43,84
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V or 3.3V)
Output Ground
5,10,21,26,55,60,71,76
Notes : 1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
Rev. 5.0 April 2006
-5-