K6F1616U6C Datasheet, PDF (5/10 Pages) Samsung semiconductor – 16Mb(1M x 16 bit) Low Power SRAM

K6F1616U6C Family
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and Undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.2³⁾
CAPACITANCE¹⁾ (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
CMOS SRAM
Typ
Max
Unit
3.0
3.3
V
0
0
V
-
Vcc+0.2²⁾
V
-
0.6
V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
Test Conditions
Min
ILI VIN=Vss to Vcc
-1
ILO ^{CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,} -1
VIO=Vss to Vcc
ICC1 ^{Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V}
-
or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns -
55ns -
VOL IOL = 2.1mA
-
VOH IOH = -1.0mA
2.4
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
-
2) 0V≤CS2≤0.2V(CS2 controlled)
Typ¹⁾
-
-
-
-
-
-
-
5.0
Max
1
1
5
25
30
0.4
-
25
Unit
µA
µA
mA
mA
V
V
µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
5
Revision 2.0
May 2005