K4S643233F Datasheet, PDF (5/8 Pages) Samsung semiconductor – 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233F-S(D)E/N/I/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 85 °C for Extended, -40 °C to 85°C for Industrial)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC ≥ tR C(min)
IO = 0 mA
Version
Unit Note
-75
-1H
-1L
80
75
75
mA 1
Precharge Standby Current
in power-down mode
ICC2P CKE ≤ VIL(max), t CC = 10ns
ICC2 PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
mA
0.5
Precharge Standby Current
IC C 2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
11
in non power-down mode
I C C 2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
8
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), t CC = 10ns
ICC3 PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
5
Active Standby Current
IC C 3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
22
mA
in non power-down mode
(One Bank Active)
I C C 3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
22
mA
Operating Current
ICC4 IO = 0 mA ,Page burst
95
75
75
mA 1
Refresh Current
ICC5 tRC ≥ tRC (min)
135
120
120 mA 2
Self Refresh Current
ICC6 CKE ≤ 0.2V
-S(D)E/I
2
-S(D)N/P
0.4
3
mA
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S643233F-S(D)E/I**
4. K4S643233F-S(D)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Rev. 1.5 Dec. 2002