K4S641633H-RE Datasheet, PDF (5/12 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -1H -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
60
55
55 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
mA
0.5
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
11
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
8
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
5
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
22
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
22
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
90
70
70 mA 1
Refresh Current
ICC5 tRC ≥ tRC(min)
135 120 120 mA 2
-E/C
-N/L
600
4
uA
350
5
Self Refresh Current
ICC6 CKE ≤ 0.2V
Internal TCSR
Max 40 Max 85/70 °C 3
Full Array
235
-G/F
1/2 of Full Array
210
350
290
uA 6
1/4 of Full Array
195
270
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
4. K4S641633H-R(B)E/C**
5. K4S641633H-R(B)N/L**
6. K4S641633H-R(B)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
February 2004