K4S51323P Datasheet, PDF (5/12 Pages) Samsung semiconductor – 4M x 32Bit x 4 Banks Mobile-SDRAM

K4S51323PF-M(E)F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70°C)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
100 90
80 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge Standby Current
in non power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during
20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
0.6
mA
0.6
20
mA
2
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during
20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
mA
2
40
mA
10
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
150 120 120 mA 1
Refresh Current
ICC5 tRC ≥ tRC(min)
170 170 170 mA 2
Internal TCSR Max 40
Max 70 °C
3
Self Refresh Current
ICC6 CKE ≤ 0.2V
Full Array
400
1/2 of Full Array 320
900
600
uA
1/4 of Full Array 280
500
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40°C/Max 70°C).
4. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
September 2004