K4S51153PF Datasheet, PDF (5/12 Pages) Samsung semiconductor – 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S51153PF - Y(P)F
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
60
55
50
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
0.6
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.6
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
2
Active Standby Current
ICC3P CKE ≤ VIL(max), tCC = 10ns
10
in power-down mode
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
40
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
95
80
80
Refresh Current
ICC5 tARFC ≥ tARFC(min)
TCSR Range
Self Refresh Current
ICC6 CKE ≤ 0.2V
Full Array
1/2 of Full Array
1/4 of Full Array
NOTES:
1. Measured with outputs open.
2. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
95
95
95
Max 40
Max 70
400
900
320
600
280
500
Unit Note
mA 1
mA
mA
mA
mA
mA
mA 1
mA
°C
uA
5
September 2004